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  i^e.u <^.m.i.-l,onaucboi l/-\oauci, line. 20 stern ave. springfield, new jersey 07081 u.s.a. the rf line telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 npn silicon high frequency transistors ... designed for low-noise, wide dynamic range front end am- plifiers, low-noise vco's, and microwave power multipliers. ? low noise ? high gain ? available in low cost plastic, high reliability ceramic or die ? state-of-the-art technology fine line geometry ion implanted arsenic emitters gold top metallization and wires silicon nitride passivation ? fully characterized mrf571 mrf572 MRFC572 fr = 8.0 ghz @ bo ma nf = 1.0 db@ 500 mhz nf = 1.5 db (3 1.0 ghz nf = 2.5 db @ 2.0 ghz high frequency transistors npn silicon off characteristics on characteristics functional tests quality semi-conductors note 1. t maximum ratings rlting* collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous total device dissipation @ tc = 50*cs* i>&^ macro-x cm* 31741 style 2 mrf572 cue 303-01 style 1 value* 10 20 3.0 70 0.75 tj = 200c max -65 to +200 10 20 3.0 70 1.0 10 - 65 to + 150 10 20 3.0 70 0.76 5.0 -65 to + 200 unit vdc vdc vdc madc watts mw/c c tiure meatured on collector lead immediately adjacent to body of package. electrical characteristics (tc = 25c unless otherwise noted.) characteristic symbol mln typ max unit collector-emitter breakdown voltage (ic = 1.0 madc, ie - 0) collector-base breakdown voltage dc = 0.1 madc, ib = 0) emitter-base breakdown voltage (ig = 50 /*adc, ic = 0) collector cutoff current (vcb - 8.0 vdc, ie = 0) vibriceo vibricbo vibriebo icbo 10 20 2.5 ? 12 ? - ? ? ? ? 10 vdc vdc vdc ,iadc dc current gain (ic - 30 madc, vce - 5- vdcl dynamic characteristics collector-base capacitance (vcb = 6.0 vdc, ie = 0, f - 1.0 mhz) current gain ? bandwidth product (vce = 8.0 vdc, ic = 50 ma, f - 1.0 ghz) hfe | 50 ? 300 ? ccb fr ? ? 0.7 8.0 1.0 ? pf ghz gain (w noise figure dc = 5.0 madc, vce = 6.0 vdc) = 0.5 ghz = 1.0 ghz noise figure dc = 5.0 madc, vce = 8-0 vdc) - 0.5 ghz = 1.0 ghz mrf571 - 2.0 ghz mrf572 f - 2.0 ghz gnf nf 10 ? 16.5 12 1.0 1.5 2.8 2.5 - 2.0 db db


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